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  • The kind of films of metal compounds to be formed on the metal substrate due to the reactive vacuum arc vapor deposition technique as described above may include those conductive material such as TiN, ZrN, HfN, TiC, Ti(C,N), CrN and CrC, as well as insulative materials such as AlN or oxide, for example TiO2, ZrO2, HfO2, V2 O5, Al2 O3 and mixed oxide, for example, (Ti, Zr)O2.
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