d of Si, Ge, Si3 N4-x (0<x<4), SiO2-x (0<x<2), SiCx (0<x<1) or Six Ge1-x (0<x<1), or a material consisting principally thereof and doped with hydrogen or halogen as a dangling bond neutralizer; wherein the non-single-crystal semiconductor has a first semiconductor region as a channel region a second and third semiconductor regions as a source and drain regions respectively connected with the oppos