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  • devicesUS8432012Mar 18, 2011Apr 30, 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS8541787Jul 15, 2009Sep 24, 2013Cree, Inc.High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capabilityUS8618582Sep 11, 2011Dec 31, 2013Cree, Inc.Edge termination structure employing recesses for e
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