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  • A bit line is formed on the first dielectric layer...http://www.google.com.au/patents/US20020048880?utm_source=gb-gplus-sharePatent US20020048880 - Method of manufacturing a semiconductor device including metal contact and capacitorAdvanced Patent SearchPublication numberUS20020048880 A1Publication typeApplicationApplication numberUS 09/923,437Publication date25 Apr 2002Filing date8 Aug 2001Priori
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