A thermal enhanced atomic layer deposition of the tantalum containing adhesion layer 176 may be carried out using an inert carrier gas, such as argon or nitrogen, with a chamber at a pressure of between about 0.1 and 50 Torr, and at a temperature of between about 200??? C. and 350??? C. The thickness of the resulting tantalum containing adhesion layer 176 can be control to any desired thickness.