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  • Furthermore, for securing electrical conductivity, it is desirable to use, when a material such as amorphous silicon is deposited, an annealed material by applying an In-Situ doping with the group III atom and group V atom, such as boron, arsenic, phosphorus, et cetera, or a material in which a metallic silicide, such as nickel silicide (NiSi) and titanium silicide (TiSi), is diffused.
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