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  • Thus, the substrate is exposed to a pre-clean or other etching process, such as an argon/hydrogen etch process to remove a portion of the barrier layer formed on the horizontal surfaces of the patterned feature, i.e, the bottom of the via 210 at the interface with the underlying metal layer 206, the bottom of the trench 212, and the field surface 214, as shown in FIG. 4.
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