As a technique of forming a high-permittivity dielectric film by an ALD method or a CVD method, Patent Document 1 discloses a noncrystalline film made of AlxM(1-x)Oy (where M is a metal such as Hf and Zr capable of forming a crystalline dielectric) having a composition expressed as 0.05<x<0.3 in which noncrystalline aluminum oxide is contained in a crystalline dielectric.