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  • A conductive structure may be included through the insulating...http://www.google.es/patents/US8120114?utm_source=gb-gplus-sharePatente US8120114 - Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate B???squeda avanzada de patentes N???mero de publicaci???nUS8120114 B2Tipo de publicaci???nConcesi???n N???mero de solicitudUS 11/646,764 Fecha
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