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  • FIG. 4B is an exemplary process for fabricating a lower part of the housing of the gap changing microelectromechanical capacitive device in FIGS. 1A, 1B, and 1C. In step (F), a non-conductive material 412 or a semiconductor material (e.g., a ceramic, a paper, a mica, a polyethylene, a glass, and a metal oxide) is deposited on a substrate 410 (e.g., a silicon or a glass).
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